论文标题
电荷陷阱和重组在硅中带电缺陷簇的偶极场
Charge trapping and recombination in dipolar field of charged defect cluster in silicon
论文作者
论文摘要
E中高能量颗粒对硅晶体传感器的广泛辐照。 g。加速器产生不同类型的缺陷簇。电子和孔的捕获会导致延长的内部电场，以驱动剩余的自由电荷。这些内部电场是否影响实验性可观察到的问题，例如重组过程和免费费用的寿命是本文的主要重点。包括电子和孔的漂移和扩散，我们通过单个偶极簇的缺陷来计算立方样品中的重组率。结果表明，当电荷扩散长度与群集的尺寸相当时，应预期对电荷寿命的巨大影响。如果扩散长度超过簇的大小，则簇几乎不会影响重组率。
Extensive irradiation of silicon crystal sensors by high energy particles in e. g. accelerators yield defect clusters of different types. Trapping of electrons and holes result in extended internal electric fields that drive remaining free charges. The question whether these internal electric fields affect the experimental observables, e.g. recombination process and lifetime of free charges is the main focus of this paper. Including the drift and diffusion of electrons and holes we calculate the recombination rate in a cubic sample with a single dipolar cluster of defects. It is shown that the large effect on charge lifetime is to be expected when charge diffusion length during the charge lifetime is comparable to the dimensions of the cluster. If the diffusion length exceeds the cluster size, the cluster barely affects the recombination rate.
