论文标题
弱耦合的半导体 - 螺旋体混合系统中缓解障碍诱导的零能态
Mitigating disorder-induced zero-energy states in weakly-coupled semiconductor-superconductor hybrid systems
论文作者
论文摘要
疾病似乎是诱导超导型 - 触发器系统中拓扑零能量状态的主要机制之一，从而挑战了拓扑超导性和主要结合状态的检测。在这里，我们证明，对于系统的任何部分，无序诱导的零能量状态的形成可以在很大程度上通过保持半导体和超导体弱之间的耦合来减轻。唯一的例外是半导体中强烈的障碍，而强耦合方案对障碍的强大效果更加强大。此外，我们发现这种弱耦合方案的拓扑阶段具有强大的障碍，具有较大且定义明确的拓扑间隙，这对拓扑保护非常有益。我们的工作显示了无序下弱和强耦合的优势和缺点，这对于设计超导体 - 症状杂交结构很重要。
Disorder has appeared as one of the main mechanisms to induce topologically trivial zero-energy states in superconductor-semiconductor systems, thereby challenging the detection of topological superconductivity and Majorana bound states. Here we demonstrate that, for disorder in any part of the system, the formation of disorder-induced trivial zero-energy states can to a large extent be mitigated by keeping the coupling between the semiconductor and superconductor weak. The only exception is strong disorder in the semiconductor, where instead the strong coupling regime is somewhat more robust against disorder. Furthermore, we find that the topological phase in this weak coupling regime is robust against disorder, with a large and well-defined topological gap which is highly beneficial for topological protection. Our work shows the advantages and disadvantages of weak and strong couplings under disorder, important for designing superconductor-semiconductor hybrid structures.
