论文标题
在电场和磁场下B-Asp量子点和量子环的电子和光学特性
Electronic and optical properties of b-AsP quantum dots and quantum rings under the electric and magnetic fields
论文作者
论文摘要
在这项工作中，我们研究了B-ASP量子点（QD）和量子环（QRS）的电子和光学性质，在存在面内电场的情况下，具有不同的边缘类型，以及使用紧密结合方法的垂直磁场。我们的计算表明，边缘状态的电子和光学性质在很大程度上取决于边缘类型。通过调节电场或磁场的强度，可以有效调整概率密度。特别是，在平面电场下，新颖的边缘状态在菱形QD和QRS中出现，并具有δ原子，并且在传导带区域的这些新型边缘状态和散装状态之间发生了过渡，这在光学吸收光谱中的光学吸收光谱中以明显且均匀分离的峰进行了说明。这项工作可能会利用潜在的系统来实施二维材料量子点之间的量子状态转移。
In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing the tight-binding method. Our calculations show that the electronic and optical properties of edge states largely depend on the edge types. By adjusting the intensity of the electric field or magnetic field, the probability density can be effectively tuned. In particular, under an in-plane electric field, novel edge states emerge in rhombus QDs and QRs with δ atoms, and transitions happen between these novel edge states and bulk states in the conduction band region, which is illustrated by distinct and evenly separated peaks in the optical absorption spectra. This work might exploit a potential system to implement quantum state transfer among two-dimensional material quantum dots.
