论文标题
gafeo中的室温多效性$ _3 $薄膜在（100）SI基板上
Room-temperature multiferroicity in GaFeO$_3$ thin film grown on (100)Si substrate
论文作者
论文摘要
在面向C轴的Gafeo $ _3 $薄膜（太空集团$ PNA2_1 $）中，已经观察到室温磁电磁多性性能，该胶片是通过脉冲激光沉积技术在经济和技术重要（100）SI基板上生长的。在10 $^4 $长度范围内GA：FE比的结构分析和全面映射揭示了外延和化学应变的共存。它诱导了较优质的磁性域和大型磁电耦合的形成 - 在$ \ sim $ 50 KOE下，Remanent Eallization的减小$ \ sim $ 21 \％。磁力显微镜揭示了更细（$ <$ 100 nm）和Coarser（$ \ sim $ 2 $ 2 $μ$ m）磁性域的存在。在（100）Si底物上生长的外延gafeo $ _3 $薄膜的强大多效性，使其与基于SI的电子设备的融合的前景更加明亮，并为开发经济和更高效的机电，电力或磁电磁性传感器设备的开发铺平了道路。
Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO$_3$ thin films (space group $Pna2_1$), grown on economic and technologically important (100)Si substrates by pulsed laser deposition technique. Structural analysis and comprehensive mapping of Ga:Fe ratio across a length scale range of 10$^4$ reveal coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling - decrease in remanent polarization by $\sim$21\% under $\sim$50 kOe. Magnetic force microscopy reveals presence of both finer ($<$100 nm) and coarser ($\sim$2 $μ$m) magnetic domains. Strong multiferroicity in epitaxial GaFeO$_3$ thin films, grown on (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic or magnetoelectric sensor devices.
