论文标题
易于平面抗铁磁绝缘子的次纳秒电脉冲开关
Sub-Nanosecond Electrical Pulse Switching of an Easy Plane Antiferromagnetic Insulator
论文作者
论文摘要
抗铁磁铁（AFM）的电交换对于AFM Spintronics至关重要。但是，关于观察到的AFM切换的机制是由于旋转轨道扭矩引起的还是热诱导的磁弹性效应，因此存在一个积极的争论。我们报告了使用PT/$α$ -FE $ _2 $ o $ _3 $双层的可靠电流引起的AFM切换，使用各种持续时间降至0.3 ns的电脉冲。开关阈值电流密度对脉冲宽度的依赖性表明，自旋轨道扭矩是负责NS型中AFM的电气切换的主要机制，将AFM Spintronics重申为超快和超级频率应用的有前途的领域。
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, there is an active debate about the mechanisms of observed AFM switching on whether the switching is due to spin-orbit torques or the much slower thermally-induced magnetoelastic effect. We report reliable current-induced AFM switching in Pt/$α$-Fe$_2$O$_3$ bilayers using electrical pulses with various durations down to 0.3 ns. The dependence of switching threshold current density on the pulse width indicates that spin-orbit torques are the dominant mechanism responsible for electrical switching of AFMs in the ns regime, reaffirming AFM spintronics as a promising field for ultrafast and ultrahigh-frequency applications.
