论文标题
4H-SIC SCHOTTKY二极管辐射硬度硬度评估，通过IBIC显微镜评估
4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy
论文作者
论文摘要
我们报告了4H-SIC Schottky屏障二极管（SBD）的离子光束诱导电荷（IBIC）表征，这是根据20 MEV C离子辐射诱导的电荷收集效率（CCE）分布的修饰，其流量范围为20至200离子/UM2。在原始二极管上进行的SBD横截面上的4 MEV质子的侧向显微镜证明了耗尽层扩展的扩大是所施加偏置的函数，并允许测量少数载体扩散长度。在用C离子辐照后，横向UBIC表现出对CCE分布的显着修饰，随着破坏性C离子的增加，耗尽层的逐渐收缩逐渐收缩。一个简单的静电模型排除了收缩，是由于植入电荷引起的，并将静电景观的扰动归因于辐射诱导的阳性电荷状态。
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC showed a significant modification of the CCE distribution, with a progressive shrinkage of the depletion layer as the fluence of the damaging C ions increases. A simple electrostatic model ruled out that the shrinkage is due to the implanted charge and ascribed the perturbation of the electrostatic landscape to radiation-induced defects with positive charge state.
