论文标题

原子缺陷在FESE $ _ {1-x} $ s $ _ {x} $超导晶体的电子状态下的影响

Impact of atomic defects in the electronic states of FeSe$_{1-x}$S$_{x}$ superconducting crystals

论文作者

Sánchez, Jazmín Aragón, Amigó, María Lourdes, Belussi, Cristian Horacio, Crivillero, María Victoria Ale, Suárez, Sergio, Guimpel, Julio, Nieva, Gladys, Gayone, Julio Esteban, Fasano, Yanina

论文摘要

基于Fe的超导体的电子特性受到掺杂和压力引入的晶体结构的变形的巨大影响。在这里,我们研究了FESE $ _ {1-x} $ S $ _ {X} $的单晶,并揭示诸如原子尺度缺陷之类的局部晶体变形会影响材料的电子核心水平状态的光谱形状。通过扫描隧道显微镜(STM),我们成像S掺杂诱导的缺陷以及与FE空位相关的稀释哑铃缺陷。我们可以通过X射线光发射光谱(XP)访问样品的电子结构,并证明只能通过考虑主加上电子状态的次要组件来充分描述SE核心水平的光谱形状。我们发现纯样品和S掺杂样品的结果,无论在后一种情况下,材料都会呈现出与S原子掺杂相关的额外晶体缺陷。我们认为,XPS光谱中的第二个成分与FESE中无处不在的哑铃缺陷有关,这些缺陷已知,这些缺陷需要对周围原子的电子云进行显着修改。

The electronic properties of Fe-based superconductors are drastically affected by deformations on their crystal structure introduced by doping and pressure. Here we study single crystals of FeSe$_{1-x}$S$_{x}$ and reveal that local crystal deformations such as atomic-scale defects impact the spectral shape of the electronic core level states of the material. By means of scanning tunnelling microscopy (STM) we image S-doping induced defects as well as diluted dumbbell defects associated with Fe vacancies. We have access to the electronic structure of the samples by means of X-ray photoemission spectroscopy (XPS) and show that the spectral shape of the Se core levels can only be adequately described by considering a principal plus a minor component of the electronic states. We find this result for both pure and S-doped samples, irrespective that in the latter case the material presents extra crystal defects associated to doping with S atoms. We argue that the second component in our XPS spectra is associated with the ubiquitous dumbbell defects in FeSe that are known to entail a significant modification of the electronic clouds of surrounding atoms.

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