论文标题
从8英寸硅晶片中的二极管散装材料中的辐射缺陷的等温辐射退火
Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers
论文作者
论文摘要
LHC的高光度升级将提供独特的物理机会，例如观察稀有过程和精确测量。但是，随之而来的苛刻的辐射环境也将对检测器性能和硬件构成前所未有的挑战。在本文中，我们使用二极管测试结构研究了辐射诱导的损伤及其宏观等温造型行为。通过测量二极管电容和泄漏的三种厚度，两种材料类型，两种材料，以及$ 6.5 \ cdot cdot 10^$ cd 10^^$ 6.5 \ cd 10^^^$ 6.5^^14 $ 10^{16} \，\ mathrm {neq/cm^2} $。
The high luminosity upgrade of the LHC will provide unique physics opportunities, such as the observation of rare processes and precision measurements. However, the accompanying harsh radiation environment will also pose unprecedented challenged to the detector performance and hardware. In this paper, we study the radiation induced damage and its macroscopic isothermal annealing behaviour of the bulk material from new 8" silicon wafers using diode test structures. The sensor properties are determined through measurements of the diode capacitance and leakage current for three thicknesses, two material types, and neutron fluences from $6.5\cdot 10^{14}$ to $10^{16}\,\mathrm{neq/cm^2}$.
