论文标题
INAS/更多混合动力半导体/超导体纳米线设备
InAs/MoRe hybrid semiconductor/superconductor nanowire devices
论文作者
论文摘要
在存在强磁场的情况下，实施能够在半导体中诱导较大能量差异的超导体是用于在未来量子信息技术中应用半导体/超导体混合材料的主要目标。在这里，我们研究了由INAS纳米线组成的设备的性能，该纳米线与钼 - rhenium（更多）超导合金的电接触。较薄的膜表现出〜10 K的过渡温度和超过6吨的临界场。正常/超导器设备启用了相应诱导的超导能的隧道光谱，该隧道光谱仪保持在〜10 k，并且更多的基于基于的Josephson设备具有超级旋转和多重Andreev反射。我们确定诱导的超导差距低于过渡温度的预期，并观察到有限磁场处的间隙软化。这些可能是基于大间隙，II型超导体的杂种的常见特征。结果鼓励进一步发展更多基于基于的混合动力。
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact to molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures ~10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to ~10 K, and MoRe based Josephson devices exhibit supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature, and observe gap softening at finite magnetic field. These may be common features for hybrids based on large gap, type-II superconductors. The results encourage further development of MoRe-based hybrids.
