论文标题
具有ZnTE屏障的磁性隧道连接中的自旋偏振运输
Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers
论文作者
论文摘要
制造具有宽带隙半导体ZnTE屏障的磁性隧道连接。在室温下，在Fe/Znte/Fe连接处观察到非常低的屏障高度和相当大的磁性。非线性I-V特性曲线证实了观察到的磁倍率是由于自旋依赖性隧道效应所致。温度依赖的研究表明，连接的总电导率由直接隧穿支配，只有一小部分从跳动传导到屏障内部的缺陷状态。
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.
