论文标题
纳米结构的镍掺杂Ag2te的热电性能增强
Enhanced Thermoelectric Performance of Nanostructured Nickel Doped Ag2Te
论文作者
论文摘要
我们报告镍掺杂AG2-Xnixte(X = 0,0.015,0.015,0.025&0.025&0.055,0.115,0.115,0.155)在5 k至575 k中的纳米结构。 (MITS)在低和中期的状态下,由于Mott-Varable范围跳跃(VRH)和Arrhenius的运输,X的增加。它们的seebeck系数在此温度范围内几乎以线性方式变化,显示金属或掺杂的半导体行为。值得注意的是,塞贝克系数的这种行为与电阻率中观察到的莫特VRH传导相反。电阻率和s的稳定增加,与结构相变相关的410 K至425 K之间的导热率的急剧下降,可实现0.86的最大功绩(ZT)在x = 0.155 In x = 0.155的最大绩效(ZT)。与散装AG2TE相比,这比散装AG2TE的高度高约83%,并且比迄今为止AG2TE纳米结构报告的最佳价值有了显着改善。因此,这项研究表明,同时纳米复合材料形成,掺杂和纳米结构可能是调整电子和声子传输以改善材料热电特性的有效策略。
We report on the thermoelectric properties of nickel doped Ag2-xNixTe (x = 0, 0.015, 0.025 & 0.055, 0.115, 0.155) nanostructures in the temperature (T) range of 5 K to 575 K. The electrical resistivity of Ag2Te nanostructure shows metallic behaviour in 5 K to 300 K initially that evolves into two metal to insulator transitions (MITs) at low and mid-temperature regimes with increasing x due to Mott-variable range hopping (VRH) and Arrhenius transports, respectively. Their Seebeck coefficient varies nearly in a linear fashion in this temperature range, showing metallic or doped-degenerate semiconducting behaviour. Notably, this behaviour of the Seebeck coefficient is in contrast to Mott VRH conduction as observed in resistivity. The steady increase in resistivity and S with the sharp decrease in thermal conductivity between 410 K to 425 K associated with the structural phase transition accomplishes a maximum thermoelectric figure of merit (ZT) of 0.86 near 480 K in x = 0.155. This is about 83 % more compared to that of bulk Ag2Te, and shows a significant improvement over the best value reported for Ag2Te nanostructures thus far. This study, therefore, shows that simultaneous nanocomposite formation, doping and nanostructuring could be an effective strategy for tuning the electron and phonon transports to improve the thermoelectric properties of a material.