论文标题
Moire Mose2同型同型中的扭曲依赖性内部和层间激子
Twist-dependent intra- and interlayer excitons in moire MoSe2 homobilayers
论文作者
论文摘要
可以通过层之间的相对扭转角选择性地设计范德华同位结构的光电特性。在这里，我们研究了Mose2同型同叶剂中依赖扭曲的Moire耦合。对于小角度，我们发现K-K和γ-K激子的明显红移，伴随着从K-K到γ-K发射的过渡。这两种效应都可以追溯到Mose2同类人的基础Moire模式，如我们针对不同Moire激子的低能量连续模型所证实的那样。我们确定了两个不同的内部摩尔摩尔激子用于R堆积，而H堆积由于反转对称性而产生了两个退化的内部激子。在这两种情况下，都在较高的能量下发现明亮的层间激子。所执行的计算与实验非常吻合，并使我们能够表征观察到的激子共振，从而提供有关层组成和相关堆叠构型的见解。
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moire coupling in MoSe2 homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moire pattern in the MoSe2 homobilayers, as confirmed by our low-energy continuum model for different moire excitons. We identify two distinct intralayer moire excitons for R-stacking, while H-stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moire exciton species.
