论文标题
相位空间AB-Initio直接和反向弹道电子发射光谱：AU/GE的Schottky屏障（100）（100）
Phase-Space Ab-Initio Direct and Reverse Ballistic-Electron Emission Spectroscopy: Schottky Barriers Determination for Au/Ge(100)
论文作者
论文摘要
我们开发了一个相位空间的形式主义，以计算金属 - 症状导体界面中的弹道电子发射光谱电流i（v）。我们考虑将电子注入直接偏差（$ V> 0 $）的传统带中，并将孔注入价带或将二级螺旋钻电子注入导出带有反向偏置的传导带（$ v <0 $）。在这里，需要对半导体反转层的AB-Initio描述（跨越数百个埃斯特罗姆）。这种形式主义有助于获取Schottky屏障的无参数最佳拟合值，这是金属 - 官方导体整流接口的关键技术特征。我们已经应用了该理论来表征AU/GE（001）接口；对于注射到传导带的电子（直接或由螺旋钻过程产生），发现了一个双屏障，而仅确定了注入价带的孔的单个屏障。
We develop a phase-space ab-initio formalism to compute Ballistic Electron Emission Spectroscopy current-voltage I(V)'s in a metal-semiconductor interface. We consider injection of electrons into the conduction band for direct bias ($V>0$) and injection of holes into the valence band or injection of secondary Auger electrons into the conduction band for reverse bias ($V<0$). Here, an ab-initio description of the semiconductor inversion layer (spanning hundreds of Angstroms) is needed. Such formalism is helpful to get parameter-free best-fit values for the Schottky barrier, a key technological characteristic for metal-semiconductor rectifying interfaces. We have applied the theory to characterize the Au/Ge(001) interface; a double barrier is found for electrons injected into the conduction band -- either directly or created by the Auger process -- while only a single barrier has been identified for holes injected into the valence band.
