论文标题
铁电晶体管驱动的非挥发性混合光相变
Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor
论文作者
论文摘要
光相变是光子积分电路（PIC）的基本元素，并且是编程PIC的直接接口。对于低功率静态操作是非常需要的，可以保留无电源的信息的非挥发相变。在这里，通过驱动IIII-V/SI杂化金属氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化物 - 氧化型（MOS）相位变速器的非易失性光相变器，并具有以铁电场效应的晶体管（FEFET）在源追随者模式下运行的。由于FEFET中的各种极化状态，多态非挥发相移至1.25π是通过CMOS兼容的操作电压获得的，低转换能量高达3.3 NJ。此外，提出了一个横梁阵列体系结构，以简化大规模图片中非易失性相位变速器的控制，并通过确认目标FEFET的选择性写入操作，并且对其他人的干扰无关。这项工作为实现大规模的非易失性可编程图片铺平了道路，用于新兴计算应用程序，例如深度学习和量子计算。
Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PIC. Non-volatile phase shifters, which can retain information without a power supply, are highly desirable for low-power static operations. Here a non-volatile optical phase shifter is demonstrated by driving a III-V/Si hybrid metal-oxide-semiconductor (MOS) phase shifter with a ferroelectric field-effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non-volatile phase shifts up to 1.25π are obtained with CMOS-compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non-volatile phase shifters in large-scale PICs and its feasibility is verified by confirming the selective write-in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large-scale non-volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.
