论文标题
在多堆栈中建立外延连通性：直达孔的生存
Establishing Epitaxial Connectedness in Multi-Stacking: The Survival of Thru-Holes in Thru-Hole Epitaxy
论文作者
论文摘要
据报道，直到孔的外观上都可以在晶体上与下面的底物排列在晶体上易于生长，该结构域与下面的底物在2D蒙版材料上转移到基板上。 [jang \ textit {et al。}，\ textit {adv。母校。 Interfaces}, \textbf{2023} \textit{10}, 4 2201406] While the experimental demonstration of thru-hole epitaxy of GaN over multiple stacks of $h$-BN was evident, the detailed mechanism of how small holes in each stack of $h$-BN survived as thru-holes during multiple stacking of $h$-BN was not intuitively clear.在这里，我们使用Monte Carlo模拟研究了在多个堆叠过程中，每个2D掩膜层堆栈中的孔中的孔可以作为直孔存活的条件。如果孔通过在特定方向上连接较小的孔而高度各向异性，则可以保持每个堆栈的生存率高，从而确立更多的外延连接性。我们的工作验证和支持表明，即使通过多个堆栈幸存下来，直到孔的外观上的外延归因于外延连接。
Thru-hole epitaxy has recently been reported to be able to grow readily detachable domains crystallographically aligned with the underlying substrate over 2D mask material transferred onto a substrate. [Jang \textit{et al.}, \textit{Adv. Mater. Interfaces}, \textbf{2023} \textit{10}, 4 2201406] While the experimental demonstration of thru-hole epitaxy of GaN over multiple stacks of $h$-BN was evident, the detailed mechanism of how small holes in each stack of $h$-BN survived as thru-holes during multiple stacking of $h$-BN was not intuitively clear. Here, we use Monte Carlo simulations to investigate the conditions under which holes in each stack of 2D mask layers can survive as thru-holes during multiple stacking. If holes are highly anisotropic in shape by connecting smaller holes in a particular direction, thru-holes can be maintained with a high survival rate per stack, establishing more epitaxial connectedness. Our work verifies and supports that thru-hole epitaxy is attributed to the epitaxial connectedness established by thru-holes surviving even through multiple stacks.
