论文标题
平面屈曲在germagraphene纳米片的电子,热和光学特性上的作用
Role of planar buckling on the electronic, thermal, and optical properties of Germagraphene nanosheets
论文作者
论文摘要
我们报告了屈曲效应,报告了胚芽芬烯(GEC)单层的电子,热和光学特性。可以通过调整平面屈曲来更改平面GEC纳米片的相对较宽的直接带隙。 GEC单层具有SP $^2 $杂交,其中$ s $ orbital的贡献是$ p $ - 轨道的贡献的一半,导致$σ\ text { - }σ$债券与$σ\文本{ - }π$债券相比。增加了平面屈曲,$ s $ - 轨道的贡献减少,而$ p $ - 轨道的贡献增加,导致SP $^3 $ - 杂交,其中$σ\ text { - }π$债券变得比$σ\ text { - }σ$ bond变得更强大。结果,屈曲GEC的带隙减小,因此热特性和光学特性得到了显着修饰。我们发现,在平面屈曲的低值下,屈曲GEC的热容量降低,这是由于光学和声音声子模式影响声子散射过程引起的。所得的光学特性,例如介电函数,折射率,电子能量损耗光谱,吸收光谱和光导率表明,与平坦的GEC相比,弯曲的GEC纳米片在可见光区域中具有增加的光学活性。当平面屈曲增加时,光导率从接近紫外线转移到可见光区域。因此,我们可以确认屈曲可以看作是改善光电设备GEC单层的另一个参数。
We report the electronic, the thermal, and the optical properties of a Germagraphene (GeC) monolayer taking into account buckling effects. The relatively wide direct band gap of a flat GeC nanosheet can be changed by tuning the planar buckling. A GeC monolayer has an sp$^2$ hybridization in which the contribution of an $s$-orbital is half of the contribution of a $p$-orbital leading to stronger $σ\text{-}σ$ bonds compared to the $σ\text{-}π$ bonds. Increasing the planar buckling, the contribution of an $s$-orbital is decreased while the contribution of a $p$-orbital is increased resulting in a sp$^3$-hybridization in which the $σ\text{-}π$ bond becomes stronger than the $σ\text{-}σ$ bond. As a result, the band gap of a buckled GeC is reduced and thus the thermal and the optical properties are significantly modified. We find that the heat capacity of the buckled GeC is decreased at low values of planar buckling, which is caused by the anticrossing of the optical and the acoustic phonon modes affecting phonon scattering processes. The resulting optical properties, such as the dielectric function, the refractive index, the electron energy loss spectra, the absorption, and the optical conductivity show that a buckled GeC nanosheet has increased optical activities in the visible light region compared to a flat GeC. The optical conductivity is red shifted from the near ultraviolet to the visible light region, when the planar buckling is increased. We can thus confirm that the buckling can be seen as another parameter to improve GeC monolayers for optoelectronic devices.