论文标题
基于纳米收缩的自旋霍尔纳米振荡器中频率，有效阻尼和阈值电流的电压控制
Voltage control of frequency, effective damping and threshold current in nano-constriction-based spin Hall nano-oscillators
论文作者
论文摘要
使用微磁模拟，我们研究了强电压控制的磁各向异性（VCMA），$ΔK= \ pm $ 200 kJ/m $^3 $与栅极宽度，$ W = $ 10-400 nm，电压门控w/cofeb/mgo基于nano-nano-coldiction spin spin nano nano nano nano nanososc。 VCMA修改了局部磁性特性，以使\ emph {i}）限制的磁力动力学过渡，\ emph {ii}）调整，\ emph {iii}）分离，具有质量不同的行为。我们发现，对于与收缩宽度相同的栅极宽度，可以实现最强的调整，与其内在值相比，可以增加有效阻尼的数量级。结果，电压控制在非常大的频率范围内保持有效，随后的制造业进步可以使SHNO轻松地集成到下一代电子设备中，以进行进一步的基础研究和工业应用。
Using micromagnetic simulations, we study the interplay between strongly voltage-controlled magnetic anisotropy (VCMA), $ΔK = \pm$200 kJ/m$^3$, and gate width, $w=$ 10--400 nm, in voltage-gated W/CoFeB/MgO based nano-constriction spin Hall nano-oscillators. The VCMA modifies the local magnetic properties such that the magnetodynamics transitions between regimes of \emph{i}) confinement, \emph{ii}) tuning, and \emph{iii}) separation, with qualitatively different behavior. We find that the strongest tuning is achieved for gate widths of the same size as the the constriction width, for which the effective damping can be increased an order of magnitude compared to its intrinsic value. As a consequence, voltage control remains efficient over a very large frequency range, and subsequent manufacturing advances could allow SHNOs to be easily integrated into next-generation electronics for further fundamental studies and industrial applications.
