论文标题
掺杂的MOS2基平面是否是有效的氢进化催化剂?电压依赖性激活能的计算
Is the doped MoS2 basal plane an efficient hydrogen evolution catalyst? Calculations of voltage-dependent activation energy
论文作者
论文摘要
过渡金属二分法剂是便宜的,且丰富的候选者可以代替贵金属作为催化剂材料。例如,氢进化反应(HE)的实验测量表明,MOS2的电催化活性显着,但取决于制备方法的变化很大。为了获得有关她的机制和活动位点的信息,我们在电化学条件下的过渡金属掺杂MOS2的基础平面对她进行了反应和激活能量,即包括施加的电极电位和溶剂效应。该计算基于确定从广义梯度近似中从密度功能理论获得的能量表面上的相关鞍点,并且有关能量学的信息用于构建依赖电压依赖的火山图。发现与3D金属原子以及PT掺杂,通过在带隙内引入电子状态,在某些情况下(CO,NI,CU,PT)显着局部对称性破坏,从而增强了氢的吸附到基础平面上。发现沃尔默 - 海洛夫斯基机制很可能是很可能的,相关的能量学表现出相当大的掺杂剂和电压依赖性。虽然可以调节氢的结合自由能似乎对她有利,但计算出的激活能证明是显着的,在-0.5 V的电压下,至少0.7 eV,表明掺杂的基础平面的催化活性较低。这表明其他站点负责实验活动,可能是边缘或基础平面缺陷。
Transition metal dichalcogenides are cheap and earth-abundant candidates for the replacement of precious metals as catalyst materials. Experimental measurements of the hydrogen evolution reaction (HER), for example, have demonstrated significant electrocatalytic activity of MoS2 but there is large variation depending on preparation method. In order to gain information about the mechanism and active sites for HER, we have carried out calculations of the reaction and activation energy for HER at the transition metal doped basal plane of MoS2 under electrochemical conditions, i.e. including applied electrode potential and solvent effects. The calculations are based on identifying the relevant saddle points on the energy surface obtained from density functional theory within the generalized gradient approximation, and the information on energetics is used to construct voltage-dependent volcano plots. Doping with 3d-metal atoms as well as Pt is found to enhance hydrogen adsorption onto the basal plane by introducing electronic states within the band gap, and in some cases (Co, Ni, Cu, Pt) significant local symmetry breaking. The Volmer-Heyrovsky mechanism is found to be most likely and the associated energetics show considerable dopant and voltage-dependence. While the binding free energy of hydrogen can be tuned to be seemingly favorable for HER, the calculated activation energy turns out to be significant, at least 0.7 eV at a voltage of -0.5 V vs. SHE, indicating low catalytic activity of the doped basal plane. This suggests that other sites are responsible for the experimental activity, possibly edges or basal plane defects.