论文标题
分析用于暗物质搜索的硅电荷耦合设备中的辐射损伤
Analysis of radiation damage in silicon charge-coupled devices used for dark matter searches
论文作者
论文摘要
晶体探测器中的核后坐力以晶体缺陷的形式产生辐射损伤，可以在科学级的CCD中测量，因为局部泄漏电流的热点受到设备的温度升高。在此程序中，我们使用中子源在DAMIC-M CCD中产生缺陷，并使用在不同温度下泄漏电流的增加，我们演示了一种鉴定DAMIC-M实验CCDS晶体缺陷的过程。这是第一次研究从核后坐力产生的个体缺陷。该技术可用于区分某些能量范围中的核后坐力与电子后坐力，这将提高CCD检测器寻找弱相互作用的暗物质的能力。
Nuclear recoils in crystal detectors generate radiation damage in the form of crystal defects that can be measured in scientific-grade CCDs as local hot spots of leakage current stimulated by temperature increases in the devices. In this proceeding, we use a neutron source to generate defects in DAMIC-M CCDs, and using increases in leakage current at different temperatures, we demonstrate a procedure for identifying crystal defects in the CCDs of the DAMIC-M experiment. This is the first time that individual defects generated from nuclear recoils have been studied. This technique could be used to distinguish nuclear recoils from electron recoils in some energy ranges, which would improve the ability of CCD detectors to search for weakly interacting dark matter.
