论文标题
铁电BA $ _ {0.6} $ sr $ _ {0.4} $ tio $ _ {3}
Remote Surface Optical Phonon Scattering in Ferroelectric Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ Gated Graphene
论文作者
论文摘要
我们报告了远程表面光学（RSO）声子散射对由铁电氧化物门控单层石墨烯中载体迁移率的影响。我们制造由外在（001）BA $ _ {0.6} $ sr $ _ {0.4} $ tio $ _ {3} $胶片的单层石墨烯晶体管晶体管，带有现场效应迁移率，高达23,000 cm $^{2} $ v $ v $ v $ v $^{ - 1} $ s $ s $ s $ s $ s $^$ 1}。切换铁电偏振会在低温下诱导石墨烯中电阻和量子大厅效应的非易失性调制。椭圆测量光谱研究揭示了Ba $ _ {0.6} $ sr $ _ {0.4} $ tio $ _ {3} $中的四对光学声子模式，我们从中提取RSO Phonon频率。可以通过考虑内在的纵向声音子和RSO声子的散射来很好地解释石墨烯中电阻率的温度依赖性，后者以35.8 meV为主导。我们的研究揭示了由RSO声子散射施加的铁控石墨烯晶体管的室温迁移率。
We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$ films, with field effect mobility up to 23,000 cm$^{2}$V$^{-1}$s$^{-1}$ achieved. Switching the ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba$_{0.6}$Sr$_{0.4}$TiO$_{3}$, from which we extract the RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.
