论文标题

由现场选择性的砷掺杂以Mo $ _5 $ si $ _3 $引起的超导性

Superconductivity Induced by Site-Selective Arsenic Doping in Mo$_5$Si$_3$

论文作者

Ruan, Bin-Bin, Sun, Jun-Nan, Zhou, Meng-Hu, Yang, Qing-Song, Gu, Ya-Dong, Chen, Gen-Fu, Shan, Lei, Ren, Zhi-An

论文摘要

与磷相比,硅质中的砷掺杂的研究要小得多。在这项研究中,超导性被掺杂以Mo $ $ _5 $ si $ _3 $成功诱导。超导过渡温度($ T_C $)达到7.7 K,高于先前已知的W $ _5 $ SI $ _3 $ -Type超导体的高度。 Mo $ _5 $ SI $ _2 $是II型BCS超导体,上下关键场分别为6.65 t和22.4吨。此外,由于原子可以选择性地将8 $ h $ sie的8 $ h $ si $ _5 $ si $ _2 $ as as。超导性的出现可能是由于特定的热量测量和第一原理计算所揭示的,因此由于掺杂的兴奋剂而导致费米水平的变化。我们的工作不仅提供了兴奋剂的另一个例子,而且还提供了通过费米级工程在硅化剂中实现超导性的实用策略。

Arsenic doping in silicides has been much less studied compared with phosphorus. In this study, superconductivity is successfully induced by As doping in Mo$_5$Si$_3$. The superconducting transition temperature ($T_c$) reaches 7.7 K, which is higher than those in previously known W$_5$Si$_3$-type superconductors. Mo$_5$Si$_2$As is a type-II BCS superconductor with upper and lower critical fields of 6.65 T and 22.4 mT, respectively. In addition, As atoms are found to selectively take the 8$h$ sites in Mo$_5$Si$_2$As. The emergence of superconductivity is possibly due to the shift of Fermi level as a consequence of As doping, as revealed by the specific heat measurements and first-principles calculations. Our work provides not only another example of As doping, but also a practical strategy to achieve superconductivity in silicides through Fermi level engineering.

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