论文标题
4H-SIC中单个浅硅离子中心的表征
Characterization of single shallow silicon-vacancy centers in 4H-SiC
论文作者
论文摘要
带负电荷的硅离子中心在磁量子传感和其他量子应用中应用。表面附近（100 nm之内）的空位中心具有不同的自旋松弛率和光学自旋极化，从而影响光学检测到的磁共振（ODMR）信号。这使得对这些中心进行表征至关重要。在这里，我们介绍了此类中心的相关自旋特性。对比度高达6％的ODMR比最新的状态更好，这使我们能够确定零场分裂，这与大多数传感应用相关。我们还提供了强度相关数据，以验证该信号是否起源于单个中心并提取不同电子状态之间的过渡速率。
Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spin properties of such centers. ODMR with a contrast of up to 6 %, which is better than the state of the art, allowed us to determine the zero field splitting, which is relevant for most sensing applications. We also present intensity-correlation data to verify that the signal originates from a single center and to extract transition rates between different electronic states.
