论文标题
通过$α-T_3 $ NIS交界处的电气和热传输
Electrical and thermal transport through $α-T_3$ NIS junction
论文作者
论文摘要
我们使用Blonder-Tinkham-Klapwijk（BTK）理论研究了基于$α-T_3 $的正常金属绝缘体 - 螺旋体（NIS）结的电气和热传输特性。我们表明，NIS连接的隧道电导是绝缘区域的有效屏障电位（$χ$）的振荡功能，直至较薄。振荡的周期性和振幅在很大程度上取决于$α$的值和超导区域的门电压，即$ u_0 $。此外，随着我们增加$ u_0 $，振荡的周期性从$π$变为$π/2 $。为了评估这种连接点的热电性能，我们计算了Seebeck系数，功绩的热电图，最大功率输出，系统的最大输出功率处的效率以及NIS交界处的热电冷却作为自冷水设备。我们在热电冷却上的结果表明，将我们的系统用作有效的冷却探测器，传感器等方面的实用性和有用性，因此对于此类连接器设备的热电应用的实验成功至关重要。此外，对于$α-t_3 $晶格（其极限情况）表示石墨烯或骰子晶格，有趣的是确定哪个更适合作为热电设备，并且答案似乎取决于$ u_0 $。我们观察到，对于$α-t_3 $晶格，对应于$ u_0 = 0 $，石墨烯（$α= 0 $）对于构建热电设备更可行，而对于$ u_0 \ gg gg e_f $，骰子lattice（$α= 1 $）具有较大的实用性。
We investigate the electrical and thermal transport properties of the $α-T_3$ based normal metal-insulator-superconductor (NIS) junction using Blonder-Tinkham-Klapwijk (BTK) theory. We show that the tunneling conductance of the NIS junction is an oscillatory function of the effective barrier potential ($χ$) of the insulating region upto a thin barrier limit. The periodicity and the amplitudes of the oscillations largely depend on the values of $α$ and the gate voltage of the superconducting region, namely, $U_0$. Further, the periodicity of the oscillation changes from $π$ to $π/2$ as we increase $U_0$. To assess the thermoelectric performance of such a junction, we have computed the Seebeck coefficient, the thermoelectric figure of merit, maximum power output, efficiency at the maximum output power of the system, and the thermoelectric cooling of the NIS junction as a self-cooling device. Our results on the thermoelectric cooling indicate practical realizability and usefulness for using our system as efficient cooling detectors, sensors, etc., and hence could be crucial to the experimental success of the thermoelectric applications of such junction devices. Furthermore, for an $α-T_3$ lattice, whose limiting cases denote a graphene or a dice lattice, it is interesting to ascertain which one is more suitable as a thermoelectric device and the answer seems to depend on the $U_0$. We observe that for an $α-T_3$ lattice corresponding to $U_0=0$, graphene ($α=0$) is more feasible for constructing a thermoelectric device, whereas for $U_0 \gg E_F$, the dice lattice ($α=1$) has a larger utility.
