论文标题
电荷密度驱动的巨型热电流切换在1T-TAS $ _ {2} $/2H-Tase $ _ {2} $/2H-MOS $ _ {2} $ HETEROSTRUCTURE
Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ Heterostructure
论文作者
论文摘要
由于电荷密度波（CDW）的调节，1T-TAS $ _2 $表现出多个电阻阶段。在最近的过去，可以通过电动驱动这种相变的事实引起了很多关注，这一事实引起了基于\ emph {Active-Metal}的电子产品。但是，偏置驱动的电阻率切换不是很大（$ <$ 5倍），并且在同一偏移中的增强将极大地影响这种相换设备。经常被忽略的一个方面是，由于1T-TAS $ _2 $的导热率低，这种相变的局部温度也发生了重大变化。 In this work, we exploit such electrically driven phase transition induced temperature change to promote carriers over a thermionic barrier in a 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ T-Junction, achieving a $964$-fold abrupt switching in the current through the MoS$_2$ channel.该设备是高度重新配置的，当偏置配置发生变化时，电流也会突然减少。对于几种电子应用，包括神经形态芯片，开关，非线性设备以及工业电子设备（例如电流和温度传感）的结果是有希望的。
1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards \emph{active-metal} based electronics. However, the bias-driven resistivity switching is not very large ($<$ 5 fold), and an enhancement in the same will highly impact such phase transition devices. One aspect that is often overlooked is that such phase transition is also accompanied by a significant change in the local temperature due to the low thermal conductivity of 1T-TaS$_2$. In this work, we exploit such electrically driven phase transition induced temperature change to promote carriers over a thermionic barrier in a 1T-TaS$_{2}$/2H-TaSe$_{2}$/2H-MoS$_{2}$ T-Junction, achieving a $964$-fold abrupt switching in the current through the MoS$_2$ channel. The device is highly reconfigurable and exhibits an abrupt reduction in current as well when the biasing configuration changes. The results are promising for several electronic applications, including neuromorphic chips, switching, nonlinear devices, and industrial electronics such as current and temperature sensing.
