论文标题
三维绝缘子中的拓扑零维缺陷和通量状态
Topological Zero-Dimensional Defect and Flux States in Three-Dimensional Insulators
论文作者
论文摘要
在绝缘晶体时，以前表明，尺寸较小的缺陷比整体可以结合拓扑电子状态。我们在这里通过证明具有整数汉堡向量的晶体缺陷的角进一步扩展了拓扑缺陷状态的分类，可以用异常电荷和自旋结合0D高阶端（Hend）状态。我们证明，hend状态是整体电子结构的内在拓扑后果，并引入了新的散装拓扑不变性，这些拓扑不变性可预测固态材料中的hend脱位状态。我们证明了在PBTE单层中存在一阶0D缺陷状态，并在3D SNTE晶体中存在Hend状态。我们将分析与绝缘晶体中的磁通量插入相关联。我们发现，倒置和时间反转 - 对称（螺旋）高阶拓扑隔热器中的$π$ -Flux管结合了旋转荷兰分离的hend状态的Kramers对，这代表了可观察到的异常的半量子量子旋转霍尔状态的可观察到的特征。
In insulating crystals, it was previously shown that defects with two fewer dimensions than the bulk can bind topological electronic states. We here further extend the classification of topological defect states by demonstrating that the corners of crystalline defects with integer Burgers vectors can bind 0D higher-order end (HEND) states with anomalous charge and spin. We demonstrate that HEND states are intrinsic topological consequences of the bulk electronic structure and introduce new bulk topological invariants that are predictive of HEND dislocation states in solid-state materials. We demonstrate the presence of first-order 0D defect states in PbTe monolayers and HEND states in 3D SnTe crystals. We relate our analysis to magnetic flux insertion in insulating crystals. We find that $π$-flux tubes in inversion- and time-reversal-symmetric (helical) higher-order topological insulators bind Kramers pairs of spin-charge-separated HEND states, which represent observable signatures of anomalous surface half quantum spin Hall states.
