论文标题
INAS-AL混合设备通过拓扑差距协议
InAs-Al Hybrid Devices Passing the Topological Gap Protocol
论文作者
论文摘要
我们介绍了与观察拓扑超导能和MajoraNA零模式一致的半导体 - 驱动器异质结构设备的测量和模拟。这些设备是用高弹性二维电子气体制造的，其中准二维电线由静电门定义。这些设备可实现局部和非本地运输特性的测量，并通过广泛的模拟进行了优化，以确保对非均匀性和混乱的鲁棒性。我们的主要结果是，根据设计的工程规范制造的几种设备已经通过了Pikulin等人定义的拓扑间隙协议。 [Arxiv：2103.12217]。该方案是一项严格的测试，由在改变磁场，半导体电子密度和连接透明胶片的同时执行的三端局部和非本地传输测量序列。通过该方案表明，通过大规模疾病模拟确定的拓扑阶段托管左右零模式的检测可能性很高。我们的实验结果与量子相转变为拓扑超导相一致，该阶段在磁场中延伸了数百个毫米，而栅极电压中的几毫伏则延伸，对应于半导体电线中的Zeeman能量和化学势中的大约一百个微电子伏特。这些区域具有大容量间隙的结束和重新开放，在设备的两端均具有零偏置电导峰，可承受连接透明胶片的变化。我们设备中提取的最大拓扑间隙为20-60美元$ $ $ EV。该演示是涉及融合和编织零模式的实验的先决条件。
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
