论文标题
在V $ _ {2} $ o $ _ {3} $薄膜中解开结构和电子属性
Disentangling structural and electronic properties in V$_{2}$O$_{3}$ thin films: a genuine non-symmetry breaking Mott transition
论文作者
论文摘要
相变是确定和控制相关材料的量子性能的关键。在这里，通过使用精确的材料合成和角度分辨的光电子光谱的强大组合，我们证明了真正的莫特过渡的证据，这些过渡液在v $ _ {2} $ o $ $ $ $ _ {3} $的薄膜中的任何对称性破坏副作用下脱落。特别是，与散装v $ _ {2} $ o $ _ {3} $晶体形成鲜明对比，我们揭示了接近金属 - 绝缘体过渡的纯电子动力学，该动力学与残基底物诱导的应变所阻止的结构转换分离。在接近过渡时，光谱信号在较大的温度范围内出奇地演变出来，费米波弹不变，并且临界温度似乎远低于大量报告的温度。我们的发现在一方面是基本的基础，即表明真正的非对称性破坏莫特过渡的普遍基准，可扩展到大量相关的量子系统，而另一方面，鉴于避免了致命的结构崩溃，因此他们有望通过实施V $ _ thin the the the Intion Metal-unduntor the Metal-underator过渡，以$ _ ^ $ o o;
Phase transitions are key in determining and controlling the quantum properties of correlated materials. Here, by using the powerful combination of precise material synthesis and angle resolved photoelectron spectroscopy, we show evidence for a genuine Mott transition undressed of any symmetry breaking side effects in the thin-films of V$_{2}$O$_{3}$. In particular, and in sharp contrast with the bulk V$_{2}$O$_{3}$ crystals, we unveil the purely electronic dynamics approaching the metal-insulator transition, disentangled from the structural transformation that is prevented by the residual substrate-induced strain. On approaching the transition, the spectral signal evolves surprisingly slowly over a wide temperature range, the Fermi wave-vector does not change, and the critical temperature appears to be much lower than the one reported for the bulk. Our findings are on one side fundamental in demonstrating the universal benchmarks of a genuine non-symmetry breaking Mott transition, extendable to a large array of correlated quantum systems and, on the other, given that the fatal structural breakdown is avoided, they hold promise of exploiting the metal-insulator transition by implementing V$_{2}$O$_{3}$ thin films in devices.
