论文标题
中性硅空置中心通过表面控制在未凝聚的钻石中
Neutral silicon vacancy centers in undoped diamond via surface control
论文作者
论文摘要
钻石中的中性硅空置中心（SIV0）是量子网络的有前途的候选者，因为它们的旋转相干时间很长，并且稳定，狭窄的光学转变。但是，稳定SIV0需要高纯度，硼掺杂钻石，这不是一件容易获得的材料。在这里，我们通过对钻石表面的化学控制证明了另一种方法。我们在氢气环境中使用低损伤化学加工和退火，以实现不稳定钻石中可逆且高度稳定的电荷状态调节。所得的SIV0中心显示了光学检测到的磁共振和散装样光学性能。通过表面终止控制电荷状态调整为基于SIV0中心的可扩展技术以及其他缺陷的电荷状态工程提供了途径。
Neutral silicon vacancy centers (SiV0) in diamond are promising candidates for quantum networks because of their long spin coherence times and stable, narrow optical transitions. However, stabilizing SiV0 requires high purity, boron doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV0 centers display optically detected magnetic resonance and bulk-like optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV0 centers, as well as charge state engineering of other defects.
