论文标题
使用低能量哑光的氧化物 - 气门界面的缺陷分析
Defect Profiling of Oxide-Semiconductor Interfaces Using Low-Energy Muons
论文作者
论文摘要
使用低能量的MUON（LEμSR）的MUON自旋旋转是一种强大的核方法，可以在$ \ si {\ si {\ nano \ meter}的长度尺度上研究表面区域和薄膜的电气和磁性特性。在这项工作中，我们展示了利用低能雄性的潜力，用于对氧化物 - 轴导剂界面的深度分辨表征，即用于硅（SI）和碳化硅（4H-SIC）。与界面和缺陷形成相比，比较了血浆增强化学蒸气沉积（PECVD）和通过SIO $ _2 $ _2 $ sio-sepoomentodor界面的热氧化而生长的二氧化硅（SIO $ _2 $）。 μally的纳米深度分辨率可以在氧化物和半导体层之间明确区分，同时还量化了由Si和SIC氧化引起的结构变化的扩展。
Muon spin rotation with low-energy muons (LEμSR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions and thin films can be studied on a length scale of $\approx$\SI{200}{\nano\meter}. In this work, we show the potential of utilizing low-energy muons for a depth-resolved characterization of oxide-semiconductor interfaces, i.e. for silicon (Si) and silicon carbide (4H-SiC). Silicon dioxide (SiO$_2$) grown by plasma-enhanced chemical vapor deposition (PECVD) and by thermal oxidation of the SiO$_2$-semiconductor interface are compared with respect to interface and defect formation. The nanometer depth resolution of μallows for a clear distinction between the oxide and semiconductor layers, while also quantifying the extension of structural changes caused by the oxidation of both Si and SiC.
