论文标题
Al2O3中间层在ZnS/Al2O3/MOS2核心壳纳米线的合成中的作用
The role of Al2O3 interlayer in the synthesis of ZnS/Al2O3/MoS2 core-shell nanowires
论文作者
论文摘要
在纳米材料的合成过程中，可能会发生纳米结构的不良结构和形态变化，尤其是在涉及多个顺序生长步骤的情况下。在这项研究中，我们描述了异质结构的ZnS/Al2O3/MOS2核心壳纳米线（NWS）的合成策略，并探讨了合成过程中Al2O3中间层的作用。通过四步途径产生核心壳NW：1）在硅晶片上合成ZnO NW，2）通过ALD通过ALD沉积薄的Al2O3层，3）MOO3层的木ementron沉积，4）4）在硫氛围中样品退火。在硫化过程中，将ZnO转换为ZnS，然后将MOO3转换为MOS2，而Al2O3中间层则保留了连续MOS2壳生长所需的NW的光滑表面。所得的ZnS/AL2O3/MOS2核心壳NWS的特征是透射电子显微镜，X射线衍射和光电光谱，拉曼光谱和光发光光谱。报告的策略可用于将其他核壳NW与过渡金属二分法（TMDS）壳合成，以保护NW核心材料，否则在高温下反应性墨西哥盐可能会改变或损坏。
During the synthesis of heterostructured nanomaterials, unwanted structural and morphological changes in nanostructures may occur, especially when multiple sequential growth steps are involved. In this study, we describe a synthesis strategy of heterostructured ZnS/Al2O3/MoS2 core-shell nanowires (NWs), and explore the role of the Al2O3 interlayer during synthesis. Core-shell NWs were produced via a four-step route: 1) synthesis of ZnO NWs on a silicon wafer, 2) deposition of thin Al2O3 layer by ALD, 3) magnetron deposition of MoO3 layer, and 4) annealing of the sample in the sulphur atmosphere. During sulphurization, ZnO is converted into ZnS, and MoO3 into MoS2, while the Al2O3 interlayer preserves the smooth surface of an NW required for the growth of a continuous MoS2 shell. The resulting ZnS/Al2O3/MoS2 core-shell NWs were characterized by transmission electron microscopy, X-ray diffraction and photoelectron spectroscopy, Raman spectroscopy, and optical photoluminescence spectroscopy. A reported strategy can be used for the synthesis of other core-shell NWs with a transition metal dichalcogenides (TMDs) shell to protect the NW core material that may otherwise be altered or damaged by the reactive chalcogenides at high temperatures.
