论文标题

在标准的亚微米硅在绝缘子过程中制造硅光子器件

Fabrication-Robust Silicon Photonic Devices in Standard Sub-Micron Silicon-on-Insulator Processes

论文作者

Rizzo, Anthony, Dave, Utsav, Novick, Asher, Freitas, Alexandre, Roberts, Samantha P., James, Aneek, Lipson, Michal, Bergman, Keren

论文摘要

从纳米尺度制造的有效折射率扰动波导几何形状鼠疫高指数对比光子平台,包括无处不在的亚米克隆硅启动器(SOI)过程。对于相关设备(例如干涉仪和谐振器),由于这些制造引起的相误差,这种变化尤其麻烦。在这封信中,我们提出并在实验上展示了一种设计方法,以大大降低对硅宽度变化的敏感性。我们将此方法应用于高度相敏感的设备,即环辅助的马赫Zehnder干涉仪(RAMZI),并显示出可比的性能和足迹与最先进的设备,同时大大减少了蚀刻变化的随机相误差。灵敏度的下降通过显着降低所需的纠正热调节功率,直接实现为节省能源,从而为超能量高效的大规模硅光子电路提供了有希望的路径。

Perturbations to the effective refractive index from nanometer-scale fabrication variations in waveguide geometry plague high index-contrast photonic platforms including the ubiquitous sub-micron silicon-on-insulator (SOI) process. Such variations are particularly troublesome for phase-sensitive devices such as interferometers and resonators, which exhibit drastic changes in performance as a result of these fabrication-induced phase errors. In this Letter, we propose and experimentally demonstrate a design methodology for dramatically reducing device sensitivity to silicon width variations. We apply this methodology to a highly phase-sensitive device, the ring-assisted Mach Zehnder interferometer (RAMZI), and show comparable performance and footprint to state-of-the-art devices while substantially reducing stochastic phase errors from etch variations. This decrease in sensitivity is directly realized as energy savings by significantly lowering the required corrective thermal tuning power, providing a promising path towards ultra-energy-efficient large-scale silicon photonic circuits.

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