论文标题

通过表面修饰接近抗铁磁拓扑绝缘子MNBI2TE4中最小拓扑电子结构

Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification

论文作者

Liang, Aiji, Chen, Cheng, Zheng, Huijun, Xia, Wei, Huang, Kui, Wei, Liyang, Yang, Haifeng, Chen, Yujie, Zhang, Xin, Xu, Xuguang, Wang, Meixiao, Guo, Yanfeng, Yang, Lexian, Liu, Zhongkai, Chen, Yulin

论文摘要

拓扑电子结构在拓扑量子材料的非平凡物理特性中起着核心作用。对于研究,需要一种最小的氢气样拓扑电子结构。在这项工作中,我们通过通过表面修饰来操纵拓扑表面状态(TSS)来证明在固有磁性拓扑绝缘子MNBI2TE4中实现这种系统的努力。使用高分辨率激光和基于同步加速器的角度分辨光谱光谱(ARPES),我们发现MNBI2TE4中的TSS与琐碎的Rashba型表面状态(RSS)大量杂交,可以通过现场表面托管(k)降低的效率去除。通过采用多种实验方法来表征K剂量的表面,我们将这种修饰归因于k簇在表面的电化学反应中。我们的工作不仅在MNBI2TE4中提供了清晰的带分配,而且还提供了突出磁性拓扑量子材料中拓扑行为的可能新途径。

The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we demonstrate an effort towards the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work not only gives a clear band assignment in MnBi2Te4, but also provides possible new routes in accentuating the topological behavior in the magnetic topological quantum materials.

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