论文标题
通过表面修饰接近抗铁磁拓扑绝缘子MNBI2TE4中最小拓扑电子结构
Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification
论文作者
论文摘要
拓扑电子结构在拓扑量子材料的非平凡物理特性中起着核心作用。对于研究,需要一种最小的氢气样拓扑电子结构。在这项工作中,我们通过通过表面修饰来操纵拓扑表面状态(TSS)来证明在固有磁性拓扑绝缘子MNBI2TE4中实现这种系统的努力。使用高分辨率激光和基于同步加速器的角度分辨光谱光谱(ARPES),我们发现MNBI2TE4中的TSS与琐碎的Rashba型表面状态(RSS)大量杂交,可以通过现场表面托管(k)降低的效率去除。通过采用多种实验方法来表征K剂量的表面,我们将这种修饰归因于k簇在表面的电化学反应中。我们的工作不仅在MNBI2TE4中提供了清晰的带分配,而且还提供了突出磁性拓扑量子材料中拓扑行为的可能新途径。
The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we demonstrate an effort towards the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work not only gives a clear band assignment in MnBi2Te4, but also provides possible new routes in accentuating the topological behavior in the magnetic topological quantum materials.