论文标题
通过脉冲激光沉积合成重费米氏Cecoin5薄膜
Synthesis of Heavy Fermion CeCoIn5 Thin Film via Pulsed Laser Deposition
论文作者
论文摘要
Cecoin5（Co115）薄膜通过脉冲激光沉积（PLD）在Al2O3（000L）底物上生长。这些电影主要沿C轴生长，并具有CEIN3和与内部合金。岩石型晶粒被核粉，其中Co115晶粒与多余的依赖性混合在底物上均匀分布。薄膜的电阻率显示在47 K附近的昆多连贯性峰，而零阻力超导状态在1.8 K处，这是PLD种植的Co115薄膜中的第一个观察结果。薄膜的rietveld细化表明，从1.6374的单晶抑制了C/A比（四方）至1.6312，这与超导过渡温度和四方性之间的线性关系一致。良好的一致性表明，PLD可以提供替代途径来调整临界自旋波动的2D特征，以了解CO115的超导配对机制。
CeCoIn5 (Co115) thin films have been grown on Al2O3 (000l) substrates through the pulsed laser deposition (PLD). The films are grown mainly along the c-axis, with CeIn3 and In-related alloys. The rock-salt type grains are nucleated, where Co115 grains mixed with excess indium are evenly distributed over the substrate. The electrical resistivity of the films shows a Kondo coherence peak near 47 K and the zero-resistance superconducting state at 1.8 K, which is the first observation in the PLD grown thin films of Co115. The Rietveld refinement of the thin films shows that the c/a ratio (tetragonality) is suppressed to 1.6312 from 1.6374 of single crystals, which is consistent with the linear relationship between the superconducting transition temperature and tetragonality. The good agreement indicates that the PLD could provide an alternative route to tune the 2D character of the critical spin fluctuations to understand the superconducting pairing mechanism of Co115.
