论文标题
高光学质量大面积单层janus过渡金属二分法的一个锅化学蒸气沉积
One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides
论文作者
论文摘要
我们报告了大区域Janus Semos单层的一汤匙化学蒸气沉积（CVD）生长，与中央过渡金属（MO）原子相对于中央过渡金属（MO）原子，具有不对称的顶部（SE）和底部（S）chalcogen原子平面。这些二维半导体单层的形成发生在热力学平衡驱动的底部SE原子的底部原子的最初生长的Mose2单晶在带有S原子的金箔上。生长过程的特征是互补的实验技术，包括拉曼和X射线光电子光谱，生长机制通过第一个原理计算合理化。合成的Janus单层的光学质量非常高，可以通过光学和磁光学测量结果证明，这些测量揭示了强烈的激子 - phonon耦合，并启用了-3.3的激子G-factor。
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3.
