论文标题
关于量化导电桥的SIO2电解质中Cu丝形成的变异性的见解
Insights on the variability of Cu filament formation in the SiO2 electrolyte of quantized-conductance conductive bridge random access memory devices
论文作者
论文摘要
导电桥随机访问记忆设备（例如CU/SIO2/W）是由于其快速，低压开关，多导电状态，可伸缩性，低偏置性和与高级SI CMOS技术的完全兼容性，因此有望在神经形态计算中应用。可以量化的电导状态源自由于基于阳离子移民的电化学过程而导致SIO2电解液中Cu细丝的形成。与丝状性质相关的一个重大挑战是将设备转换为导电状态所需的电压的强烈可变性。在这里，基于对数百五十CU/SIO2/W设备的统计分析，我们指出了激活能分布在无定形SIO2中铜离子扩散的关键作用。当考虑CU扩散路径的理论能量景观以生长细丝时，周期到周期的变异性会很好地建模。这项工作的观点是制定策略以缩小无定形SIO2中激活能的分布的策略。
Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multiple-conductance states, scalability, low off-current, and full compatibility with advanced Si CMOS technologies. The conductance states, which can be quantized, originate from the formation of a Cu filament in the SiO2 electrolyte due to cation-migration-based electrochemical processes. A major challenge related to the filamentary nature is the strong variability of the voltage required to switch the device to its conducting state. Here, based on a statistical analysis of more than hundred fifty Cu/SiO2/W devices, we point to the key role of the activation energy distribution for copper ion diffusion in the amorphous SiO2. The cycle-to-cycle variability is modeled well when considering the theoretical energy landscape for Cu diffusion paths to grow the filament. Perspectives of this work point to developing strategies to narrow the distribution of activation energies in amorphous SiO2.
