论文标题
在几层钼二硫化物中，带状圈的激子的Ultrastrong耦合
Ultrastrong Coupling of Band-Nested Excitons in Few-Layer Molybdenum Disulphide
论文作者
论文摘要
二维过渡金属二核苷（2D TMDC）是研究光结合相互作用的有趣平台，因为它们将常规半导体的电子性质与有机系统中发现的光共振相结合。然而，在强激子耦合中所表现出的耦合强度仍比有机系统中发现的耦合强度要低得多。在本文中，我们采用了一种新的方法，它利用了几层钼二硫化物（$ \ text {fl-mos} _2 $）中上频段GAP C激子的较大振荡器强度。当耦合$ \ text {fl-mos} _2 $ c激子在室温下，我们显示了293 meV的K空间狂犬分裂。该值是未耦合的激子能量（2.67 eV或464 nm）的11％，〜2x TMDC中通常看到的内容，将系统放置在超筋耦合方案中。我们的结果朝着最终在CMOS兼容系统（2D TMDC）中最终实现超震动耦合的有效量子相干过程迈出了一步。
The two-dimensional transition-metal dichalcogenides (2D TMDCs) are an intriguing platform for studying light-matter interactions because they combine the electronic properties of conventional semiconductors with the optical resonances found in organic systems. However, the coupling strengths demonstrated in strong exciton-polariton coupling remain much lower than those found in organic systems. In this paper, we take on a new approach by utilizing the large oscillator strength of the above-band gap C exciton in few-layer molybdenum disulphide ($\text{FL-MoS}_2$). We show a k-space Rabi splitting of 293 meV when coupling $\text{FL-MoS}_2$ C excitons to surface plasmon polaritons at room temperature. This value is 11% of the uncoupled exciton energy (2.67 eV or 464 nm), ~2x what is typically seen in the TMDCs, placing the system in the ultrastrong coupling regime. Our results take a step towards finally achieving the efficient quantum coherent processes of ultrastrong coupling in a CMOS-compatible system -- the 2D TMDCs -- in the visible spectrum.
