论文标题
相位稳定性,拓扑声子和温度诱导的拓扑相变的证据
Evidence of phase stability, topological phonon and temperature-induced topological phase transition in rocksalt SnS and SnSe
论文作者
论文摘要
SNS和SNSE均已在实验和理论上被证实是天然岩石结构中的拓扑结晶绝缘子。在这里,对岩石相中的两种材料进行了研究,调查了语音结构,热力学特性和依赖温度的电子相互作用(EPI)。以前进行的理论研究预测了在这种晶体结构下在环境条件下SNS的相位不稳定性。但是,在对SNS的声子计算进行了详细的研究之后,我们预测了SNS的相位稳定性,并考虑了SN 4 $ p $轨道,因为Valence在$ ab-initio $计算中的价值状态。还详细介绍了两种材料的远距离库仑力以及其动力学特性的重要性。沿X-W方向发现了拓扑声子的初步证据,与II型Weylsonic材料ZnSe相比,观察到线性带触摸。由于EPI,可以看到这些材料的拓扑相变,其中估计了非线性温度依赖性带隙。发现SNS(SNSE)的过渡温度的预测值为$ \ sim $ 700 K,在此温度之后,可以看到非平凡至琐碎的拓扑阶段。与SNSE材料相比,EPI的强度对SNS的电子结构的影响更大。由于EPI引起的温度依赖性线宽和线路依赖性线宽和线路,讨论了带隙随温度升高的非线性行为的原因。本研究揭示了SNS的相位稳定性以及对SNS和SNSE EPI的热影响的比较研究。此外,温度诱导的拓扑相变的可能性为应用这两种材料用于应用设备的应用提供了一种重要行为。
Both SnS and SnSe have been experimentally and theoretically confirmed as topological crystalline insulators in native rocksalt structure. Here, phononic structure, thermodynamical properties and temperature dependent electron-phonon interaction (EPI) have investigated for both the materials in rocksalt phase. Previously performed theoretical studies have predicted the phase instability of SnS in this crystal structure at ambient condition. But, after a detailed study performing on the phonon calculation of SnS, we have predicted the phase stability of SnS with considering the Sn 4$p$ orbitals as valence states in $ab-initio$ calculation. The importance of long range Coulomb forces along with the themodynamical properties are also described in detailed for both materials. The preliminary evidence of topological phonon is found along X-W direction, where the linear band touching is observed as compared to type II Weyl phononic material ZnSe. The topological phase transition is seen for these materials due to EPI, where non-linear temperature dependent bandgap is estimated. The predicted value of transition temperature for SnS (SnSe) is found to be $\sim$700 K, where after this temperature the non-trivial to trivial topological phase is seen. The strength of EPI shows more stronger impact on the electronic structure of SnS than SnSe material. The reason of non-linear behaviour of bandgap with rise in temperature is discussed with the help of temperature dependent linewidths and lineshifts of conduction band and valence band due to EPI. The present study reveals the phase stability of SnS along with the comparative study of thermal effect on EPI of SnS and SnSe. Further, the possibility of temperature induced topological phase transition provides one of important behaviour to apply these two materials for device making application.