论文标题
横梁转向使用准摩西式弯曲硅单晶 - 855 MeV和6.3 GEV电子的计算机模拟，并与实验进行比较
Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments
论文作者
论文摘要
已经对855 MeV进行了蒙特卡洛模拟，在圆形弯曲平面（111）平面的硅单晶中引导的6.3 GEV电子。目的是确定关键的实验参数，这些参数影响体积偏转和体积捕获特性。这些属于晶体相对于名义束方向的角对准。使用了连续图的图片。将仿真结果与实验进行了比较。事实证明，基于准摩西效应的原理弯曲的晶体弯曲的假设不需要重现实验观测。
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the experimental observations.
