论文标题
莫伊尔半导体中的连续莫特过渡：长波长不均匀性的作用
Continuous Mott transition in moiré semiconductors: role of long-wavelength inhomogeneities
论文作者
论文摘要
Moiré过渡金属二甲藻元化材料的最新实验报告了观察到从金属到顺磁性莫特绝缘子的连续带宽调整的过渡，并在固定的一个moiré单位细胞中固定填充一个电子。电运输测量结果揭示了许多令人困惑的特征，这些特征似乎与引起互动但无序的，带宽调整的金属绝缘体转变的理论期望不符。在这项工作中，我们包括长波长不均匀性的效果，这是基于在干净极限下在固定填充处进行连续金属 - 绝缘体过渡的结果。我们使用随机电阻网络的框架来研究临界点附近的中级不均匀性对传输的影响，从而突出了基于简单的基于渗透的图片的显着差异。我们将结果放在最近和正在进行的实验的背景下。
Recent experiments in moiré transition metal dichalcogenide materials have reported the observation of a continuous bandwidth-tuned transition from a metal to a paramagnetic Mott insulator at a fixed filling of one electron per moiré unit cell. The electrical transport measurements reveal a number of puzzling features that are seemingly at odds with the theoretical expectations of an interaction induced, but disorder-free, bandwidth-tuned metal-insulator transition. In this work, we include the effects of long-wavelength inhomogeneities, building on the results for a continuous metal-insulator transition at fixed filling in the clean limit. We examine the effects of meso-scale inhomogeneities near the critical point on transport using the framework of random resistor networks, highlighting the salient differences from a simple percolation-based picture. We place our results in the context of recent and ongoing experiments.
