论文标题
单个SIGE量子点发射在高Q光子晶体谐振器中确定性增强
Single SiGe Quantum Dot Emission Deterministically Enhanced in a High-Q Photonic Crystal Resonator
论文作者
论文摘要
我们报告了单个SIGE量子点（QD）的共振增强的辐射发射，该点通过可扩展方法确定性地嵌入其最大模态电场位置的双裂光子晶体谐振器（PHCR）。通过优化我们的分子束外延（MBE）生长技术，我们能够减少整个谐振器内的GE量，从而获得绝对最小的恰好是一个QD，相对于PHCR准确地定位了一个相对于PHCR，而否则是平坦的，另一种单层，几个单层薄的GE润湿层（WL）。使用此方法，可以实现QD负载的PHCR的记录质量（Q）因子，最高$ Q \ sim 10^5 $。与包含WL但没有QD的样品的对照PHCR进行了比较，以及对脉冲激发后温度，激发强度和发射衰减的谐振耦合发射的依赖性的详细分析。我们的发现无疑证实了在谐振器中心的单个QD，是电信光谱范围内潜在的新型光子源。
We report the resonantly enhanced radiative emission from a single SiGe quantum dot (QD), which is deterministically embedded into a bichromatic photonic crystal resonator (PhCR) at the position of its largest modal electric field by a scalable method. By optimizing our molecular beam epitaxy (MBE) growth technique, we were able to reduce the amount of Ge within the whole resonator to obtain an absolute minimum of exactly one QD, accurately positioned by lithographic methods relative to the PhCR, and an otherwise flat, a few monolayer thin, Ge wetting layer (WL). With this method, record quality (Q) factors for QD-loaded PhCRs up to $Q\sim 10^5$ are achieved. A comparison with control PhCRs on samples containing a WL but no QDs is presented, as well as a detailed analysis of the dependence of the resonator-coupled emission on temperature, excitation intensity, and emission decay after pulsed excitation. Our findings undoubtedly confirm a single QD in the center of the resonator as a potentially novel photon source in the telecom spectral range.
