论文标题
薄膜锂锂中780 nm灯的高带宽CMOS-电压级电气调制
High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate
论文作者
论文摘要
在可见的near-infrade（VNIR）波长下运行的集成光子学提供了可扩展的平台，用于推进光学系统以解决原子钟，传感器和量子计算机。自由空间控制光学的复杂性导致原子和离子的可寻址性有限，这仍然是对可扩展性和成本的障碍。马赫汉德干涉仪的网络可以通过提供多个输出光束的高带宽电磁控制来克服应对原子的挑战。在这里，我们在蓝宝石锂锂上展示了一个VNIR MACH-ZEHNDER干涉仪，其CMOS电压级兼容的全旋转电压为4.2 V，仅占据0.35 mmmm $ $ $^2 $的Electro-Ectro-Ectro-Ectro-Ectro-Ectr-Electro-Ectro-Octwidth。我们的波导展示了1.6 dB/cm的传播损失，而微型谐振器的内在质量因子为4.4 $ \ times $ 10 $^5 $。这款用于VNIR集成光子学的专门平台可以开放新的途径，以解决高精度和可忽略不计的大量Qubits。
Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm$^2$. Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 $\times$ 10$^5$. This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.
