论文标题
类似和不同的半导体材料的传输激光焊接
Transmission laser welding of similar and dissimilar semiconductor materials
论文作者
论文摘要
激光微焊接是当今在各个领域应用的先进制造方法。但是，到目前为止，重要的物理局限性阻止了其在硅和其他技术必需半导体中的适用性。集中精力将光学限制限制在具有强烈红外光的狭窄差距材料之间的界面上的可交付能密度上，我们首先使用Nansecond激光脉冲在硅硅工件之间进行了透射激光焊接的首次可行性。我们获得了32 $ \ pm $ 10 MPA的剪切连接强度，与复杂的过程替代方案相比，它非常有利。在包括砷耐加仑的不同材料组合上重复的实验支持，我们确认，对于类似和不同的半导体，可以达到这种显着的性能水平。演示依靠一个小的占地纤维激光器，这一方面具有巨大的承诺，可以使高效灵活的过程有益于重要的技术发展，包括实验室芯片和混合动力半导体系统。
Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential semiconductors. Concentrating on circumventing the optical limits on the deliverable energy density at interfaces between narrow-gap materials with intense infrared light, we make the first feasibility demonstration of transmission laser welding between silicon workpieces using nanosecond laser pulses. We obtain a shear joining strength of 32$\pm$10 MPa which compares very favorably to the complex process alternatives. Supported by experiments repeated on different material combinations including gallium arsenide, we confirm that this remarkable performance level is achievable for similar and dissimilar semiconductors. The demonstrations rely on a small footprint fiber laser, an aspect that holds great promises for the advent of a high-efficiency flexible process beneficial for important technology developments including lab-on-a-chip and hybrid semiconductor systems.
