论文标题
通过扫描X射线衍射显微镜，通过$ _x $ ga $ _ {1-x} $ n层部分放松的全应变张量，旋转和组成的纳米级映射部分放松
Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
论文作者
论文摘要
应变和组成在半导体物理学中起着基本作用，因为它们是调整材料的电子和光学特性并因此开发新设备的方法。如今，以非破坏性方式测量外延系统中的应变仍然是一个挑战，这在经常受到强烈压力的应变工程装置中变得尤为重要。在这项工作中，我们通过扫描X射线衍射显微镜来证明应变和晶格方向的全部张量的显微图像。我们开发一种形式主义，从一组扫描衍射测量值中提取所有应变和取向的组成部分，并将该技术应用于$ _x $ ga $ _ $ _ {1-x} $ n双层的图案中，以研究菌株松弛和鉴别掺入现象。分离和分析了由于依赖含量和螺纹位错而产生的贡献。
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned In$_x$Ga$_{1-x}$N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed.
