论文标题
在二维半导体过渡金属二核苷中的调子模式的直接探测声子模式特异性电子散射：对称和浆果相
Direct probing of phonon mode specific electron-phonon scatterings in two-dimensional semiconductor transition metal dichalcogenides: Symmetry and Berry phase
论文作者
论文摘要
固态系统中的电子散射是确定许多关键物理量（例如电荷载体迁移率和热导电）的关键过程。在这里，我们通过非弹性电子隧道隧道光谱测量值，量子传输模拟和密度函数计算，在分层的半导体金属二甲化物WSE2，MOSE2，WS2和MOS2中报告了指声子模式特异性电子弹片的直接探测。我们在实验和理论上表征了动量支持的单音和两声电子散射，涉及单层和双层膜中的多达八个单独的声子模式，其中横向，纵向声学和光学的光学声子在量子电荷流中扮演着重要的孔隙。此外，我们观察到，在所有四个半导体层中确认它们都是通用的两次无弹性电子隧道过程，均由层依赖的对称性，量子干扰和几何浆果相控制。
Electron-phonon scatterings in solid-state systems are pivotal processes in determining many key physical quantities such as charge carrier mobilities and thermal conductivities. Here, we report on the direct probing of phonon mode specific electron-phonon scatterings in layered semiconducting transition metal dichalcogenides WSe2, MoSe2, WS2, and MoS2 through inelastic electron tunneling spectroscopy measurements, quantum transport simulations, and density functional calculation. We experimentally and theoretically characterize momentum-conserving single- and two-phonon electron-phonon scatterings involving up to as many as eight individual phonon modes in mono- and bilayer films, among which transverse, longitudinal acoustic and optical, and flexural optical phonons play significant roles in quantum charge flows. Moreover, we observe that two-phonon inelastic electron tunneling processes, which are confirmed to be generic in all four semiconducting layers, are governed by layer-number dependent symmetry, quantum interference, and geometric Berry phase.
