论文标题
SNBI的Ultrafast Spin-Charge转换$ _2 $ TE $ _4 $/CO拓扑绝缘子界面由Terahertz发射光谱探测
Ultrafast spin-charge conversion at SnBi$_2$Te$_4$/Co topological insulator interfaces probed by terahertz emission spectroscopy
论文作者
论文摘要
涉及拓扑表面状态（TSS）的旋转电荷转换（SCC）是Terahertz（THZ）发射高效的自旋装置的最有希望的路线之一。在这里，THZ的产生通常主要通过SCC发生，该SCC由有效的动力自旋注射到自旋锁定的TSS中。在这项工作中，我们证明了来自纳米厚的拓扑侮辱器（TI）/铁磁交界处的相当大的发射 - SNBI $ _2 $ _2 $ TE $ _4 $/CO - 专门设计，旨在避免使用FERMI级别的TSS与TSS交叉交叉，不像其父母材料BI $ _2 $ _2 $ _3 $ _3 $ _3 $ _3 $ _3 $ _3 $。 THZ发射时间域光谱（TDS）用于通过研究TI厚度和THZ发射的角度依赖性来指示TSS对SCC的贡献。这项工作说明了THZ发射TD作为强大的工具，以及角度分辨光发射光谱（ARPES）方法，研究了Ti/Ferromagnet双层的界面自旋特性。
Spin-to-charge conversion (SCC) involving topological surface states (TSS) is one of the most promising routes for highly efficient spintronic devices for terahertz (THz) emission. Here, the THz generation generally occurs mainly via SCC consisting in efficient dynamical spin injection into spin-locked TSS. In this work, we demonstrate sizable THz emission from a nanometric thick topological insultator (TI)/ferromagnetic junction - SnBi$_2$Te$_4$/Co - specifically designed to avoid bulk band crossing with the TSS at the Fermi level, unlike its parent material Bi$_2$Te$_3$. THz emission time domain spectroscopy (TDS) is used to indicate the TSS contribution to the SCC by investigating the TI thickness and angular dependence of the THz emission. This work illustrates THz emission TDS as a powerful tool alongside angular resolved photoemission spectroscopy (ARPES) methods to investigate the interfacial spintronic properties of TI/ferromagnet bilayers.
