论文标题
高精度的真实空间模拟静电限制的几电子状态
High-precision real-space simulation of electrostatically-confined few-electron states
论文作者
论文摘要
在本文中，我们提出了一种计算过程，该程序利用真实空间网格来获得高精度近似的静电限制的较少电子状态，例如在门控的半导体量子点中出现的静电状态。我们使用完整的配置相互作用（FCI）方法，具有连续调整的正顺式轨道基础来近似此类系统的地面和激发态。我们还基于量子点设备的现实分析静电潜力引入了基准问题。我们表明，我们的方法会导致高度精确的计算能量和能量差异，这是在广泛的模型参数上。基准的分析定义允许集合容易复制的测试，从而促进与其他计算方法的比较。
In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.
