论文标题

i4/mcm-si $ _ {48} $:理想的拓扑结节线半学

I4/mcm-Si$_{48}$: An Ideal Topological Nodal-Line Semimetal

论文作者

Su, Laiyuan, Li, Shifang, Li, Jin, He, Chaoyu, Zeng, Xu-Tao, Sheng, Xian-Lei, Ouyang, Tao, Zhang, Chunxiao, Zhong, Chao Tangand Jianxin

论文摘要

拓扑半学(TSM)由于其异国情调的物理特性和巨大的应用潜力引起了许多关注。基于硅的TMS尤其重要,因为它们具有与当前半导体行业的高丰度,无毒性和自然兼容性。在这项工作中,理想的低能拓扑结节线线(TNLSM)硅(I4/MCM-SI $ _ {48} $)在Fermi级别上有一个干净的频段交叉,通过可通过可转移的紧密结合和DFT-HSE算法筛选了成千上万的Fermi级别。地层能量,声子分散,从头算分子动力学和弹性常数的结果表明,I4/MCM-SI48具有良好的稳定性,并且比几种合成的硅结构更稳定。通过分析对称性,它揭示了I4/MCM-SI48的拓扑结节线受镜子对称性和反转的保护,时间反转和SU(2)自旋旋转对称性,并且观察到近乎平坦的鼓头样表面光谱。此外,I4/MCM-SI48展示了具有高费米速度(3.4 $ \ sim $ 4.36 $ \ times $ 10 $^5 $ m/s)的异国光电属性和Dirac Fermions。我们的研究为与半导体兼容的高速光电设备中的基础研究和潜在的实用应用提供了有希望的拓扑结构半学。

Topological semimetals (TSMs) have attracted numerous attention due to their exotic physical properties and great application potentials. Silicon-based TMSs are of particularly importance because of their high abundance, nontoxicity and natural compatibility with current semiconductor industry. In this work, an ideal low-energy topological nodal-line semimetal (TNLSM) silicon (I4/mcm-Si$_{48}$) with a clean band crossing at Fermi level is screened from thousands of silicon allotropes by the transferable tight-binding and DFT-HSE calculations. The results of formation energy, phonon dispersion, ab initio molecular dynamics and elastic constants show that I4/mcm-Si48 possesses good stability and is more stable than several synthetized silicon structures. By analyzing the symmetry, it reveals that the topological nodal-line of I4/mcm-Si48 is protected by mirror symmetry and inversion, time-reversal and SU(2) spin-rotation symmetries, and the nearly flat drumhead-like surface spectrum is observed. Furthermore, I4/mcm-Si48 exhibits exotic photoelectric properties and the Dirac fermions with high Fermi velocity (3.4$\sim$4.36$\times$10$^5$ m/s) can be excited by low energy photons. Our study provides a promising topological nodal-line semimetal for fundamental research and potential practical applications in semiconductor-compatible high-speed photoelectric devices.

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