论文标题
纳米结构过渡金属二甲基元素多层用于晚期纳米光子学
Nanostructured transition metal dichalcogenide multilayers for advanced nanophotonics
论文作者
论文摘要
由于其异常的光学,激子,机械性能和电子特性,过渡金属二分法(TMD)引起了极大的关注。纳米结构的多层TMD最近被证明是纳米光的应用非常有前途的,这是由于其异常高的折射率和光学各向异性的动机。在这里,我们将此愿景扩展到更复杂的结构,例如纳米界和纳米骨的周期性阵列,以及概念证明的波导和共振器。我们特别关注各种先进的纳米化策略,包括仔细选择对电子束光刻和蚀刻方法的抗拒选择。此处研究的特定材料包括半导体WS $ _2 $,面内各向异性Res $ _2 $,以及金属Tase $ _2 $,TAS $ _2 $和NBSE $ _2 $。所得的纳米结构可能会影响几个纳米光子和光电子区域,包括高索引纳米光子学,血浆和片上光学电路。此处开发的TMD材料依赖性纳米化参数的知识将有助于扩大这些材料在所有TMD纳米光子学中的未来应用的范围。
Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical, excitonic, mechanical, and electronic properties. Nanostructured multilayer TMDs were recently shown to be highly promising for nanophotonic applications, as motivated by their exceptionally high refractive indexes and optical anisotropy. Here, we extend this vision to more sophisticated structures, such as periodic arrays of nanodisks and nanoholes, as well as proof-of-concept waveguides and resonators. We specifically focus on various advanced nanofabrication strategies, including careful selection of resists for electron beam lithography and etching methods. The specific materials studied here include semiconducting WS$_2$, in-plane anisotropic ReS$_2$, and metallic TaSe$_2$, TaS$_2$ and NbSe$_2$. The resulting nanostructures can potentially impact several nanophotonic and optoelectronic areas, including high-index nanophotonics, plasmonics and on-chip optical circuits. The knowledge of TMD material-dependent nanofabrication parameters developed here will help broaden the scope of future applications of these materials in all-TMD nanophotonics.