论文标题
一对颜色中心的光学上级在集成的硅 - 碳化物 - 绝缘子微孔子中
Optical superradiance of a pair of color centers in an integrated silicon-carbide-on-insulator microresonator
论文作者
论文摘要
对颜色中心的量子信息处理技术的一个杰出挑战是将光学连接的发射器集成到可扩展的薄膜光子学中。在这里，我们报告了将近传输有限的硅空置（v $ _ {\ text {si}} $）集成到在CMOS兼容的4H-Silicon Carbide-On-On-On-on-unsulator平台上构造的微毫端谐振器中的缺陷。我们展示了一对颜色中心与同一腔模式的单发射机合作性高达0.8，以及光学上级。我们研究了多模层干扰对此多发射极量量子电动力学系统的光子散射动力学的影响。这些结果对于碳化硅中的量子网络的发展至关重要，并通过将光学连接的自旋缺陷与晶圆量表，最先进的光子学结合起来，弥合经典的量子光子差间隙。
An outstanding challenge for color center-based quantum information processing technologies is the integration of optically-coherent emitters into scalable thin-film photonics. Here, we report on the integration of near-transform-limited silicon vacancy (V$_{\text{Si}}$) defects into microdisk resonators fabricated in a CMOS-compatible 4H-Silicon Carbide-on-Insulator platform. We demonstrate a single-emitter cooperativity of up to 0.8 as well as optical superradiance from a pair of color centers coupled to the same cavity mode. We investigate the effect of multimode interference on the photon scattering dynamics from this multi-emitter cavity quantum electrodynamics system. These results are crucial for the development of quantum networks in silicon carbide and bridge the classical-quantum photonics gap by uniting optically-coherent spin defects with wafer-scalable, state-of-the-art photonics.
