论文标题
Chern数字可调量子异常霍尔在单层过渡金属氧化物中通过操纵磁化方向
Chern Number Tunable Quantum Anomalous Hall Effect in Monolayer Transitional Metal Oxides via Manipulating Magnetization Orientation
论文作者
论文摘要
尽管在理论和实验中都努力探索量子异常效应（QAHE），但具有可调Chern数字的QAHE系统仍受到限制。在这里，我们从理论上建议NiAso $ _3 $和PDSBO $ _3 $，单层过渡金属氧化物，可以通过操纵其磁化方向来实现使用可调Chern数字的Qahe。当磁化位于\ textIt {x-y}平面并且所有镜面对称性都被打破时，低矮的数字（即$ \ Mathcal {C} = \ pm1 $）阶段出现。当磁化表现出非零\ textIt {z} - 方向组件时，即使在倾斜的磁磁化的情况下，系统即使在存在的情况下，系统都会进入高洁核数（即，$ \ mathcal {c} = \ pm3 $）阶段。当将磁化点对准\ textit {z} -Direction时，全球频段差距可以接近单层PDSBO $ _3 $（23.4 MEV）的室温能量量表。通过使用基于Wannier的紧密结合模型，我们建立了磁化诱导拓扑相变的相图。我们的工作提供了一个高温QAHE系统，具有可调的Chern编号，用于实用电子应用。
Although much effort has been made to explore quantum anomalous Hall effect (QAHE) in both theory and experiment, the QAHE systems with tunable Chern numbers are yet limited. Here, we theoretically propose that NiAsO$_3$ and PdSbO$_3$, monolayer transitional metal oxides, can realize QAHE with tunable Chern numbers via manipulating their magnetization orientations. When the magnetization lies in the \textit{x-y} plane and all mirror symmetries are broken, the low-Chern-number (i.e., $\mathcal{C}=\pm1$) phase emerges. When the magnetization exhibits non-zero \textit{z}-direction component, the system enters the high-Chern-number (i.e., $\mathcal{C}=\pm3$) phase, even in the presence of canted magnetization. The global band gap can approach the room-temperature energy scale in monolayer PdSbO$_3$ (23.4 meV), when the magnetization is aligned to \textit{z}-direction. By using Wannier-based tight-binding model, we establish the phase diagram of magnetization induced topological phase transition. Our work provides a high-temperature QAHE system with tunable Chern number for the practical electronic application.
